During the operation of a thyristor, its anode A and cathode K are connected to the power supply and load, forming the main circuit of the thyristor. The gate G and cathode K of the thyristor control the device connection of the thyristor, forming the control circuit of the thyristor.
When a thyristor is subjected to reverse anode voltage, regardless of the voltage applied to the gate, the thyristor remains in an off state.
It has the advantages of high input resistance (100000000-1000000000 Ω), low noise, low power consumption, large dynamic range, easy integration, no secondary breakdown phenomenon, wide safe working area, and good thermal stability. It has become a strong competitor to bipolar transistors and power transistors.
The new generation of amplification components developed based on the principle of the transistor has three polarities: gate, drain, and source. Its characteristic is the extremely high internal resistance of the gate, which can reach several hundred megaohms using silicon dioxide material. It belongs to voltage controlled devices.
The new generation of amplification components developed based on the principle of the transistor has three polarities: gate, drain, and source. Its characteristic is the extremely high internal resistance of the gate, which can reach several hundred megaohms using silicon dioxide material. It belongs to voltage controlled devices.
For unipolar TVS and bipolar TVS
